
K4FBE3D4HM-GHCL
SAMSUNG

STD19N3LLH6AG is a 30v Automotive-grade N-channel STripFET? H6 Power MOSFET. The STMicroelectronics STD19N3LLH6AG is developed using the STripFET? H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. The Operating and Storage Temperature Range is between -55 and 175?. And the Transistor STD19N3LLH6AG is in the TO-252-3 package with 30W power dissipation.
Designed for automotive applications and AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Logic level
Rotary Switch
DIP Switch
Limit Switch
Reed Switch
Rocker Switch
No key features available
No application scenarios available
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Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
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