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    Part number
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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. ESM2012DV STMicroelectronics

    ESM2012DV [STMicroelectronics]

    ESM2012DV
    ESM2012DV

    Part No:

    ESM2012DV

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    NPN - Darlington 150°C TJ 1 Elements 4 Terminations SILICON ISOTOP Tube Chassis Mount

    RoHS Status:

    Product FAQ

    1. Is ESM2012DV available for RFQ?

    Yes. ESM2012DV by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for ESM2012DV?

    Pricing for ESM2012DV can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of ESM2012DV?

    ESM2012DV is a STMicroelectronics Transistors with Packaging: Tube and DC Current Gain (hFE) (Min) @ Ic, Vce: 1200 @ 100A 5V and Collector Emitter Saturation Voltage: 1.5V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for ESM2012DV?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can ESM2012DV be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to ESM2012DV?

    Yes. If ESM2012DV is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    ESM2012DV

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Chassis Mount, Screw
    Mounting Type
    Chassis Mount
    Package / Case
    ISOTOP
    Number of Pins
    4
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    4
    ECCN Code
    EAR99
    Terminal Finish
    Nickel (Ni)
    Voltage - Rated DC
    120V
    Max Power Dissipation
    175W
    Terminal Position
    UPPER
    Terminal Form
    UNSPECIFIED
    Current Rating
    120A
    Base Part Number
    ESM2012
    Pin Count
    4
    Number of Elements
    1
    Polarity
    NPN
    Configuration
    DARLINGTON WITH BUILT-IN DIODE
    Power Dissipation
    175W
    Case Connection
    ISOLATED
    Transistor Application
    SWITCHING
    Transistor Type
    NPN - Darlington
    Collector Emitter Voltage (VCEO)
    150V
    Max Collector Current
    120A
    DC Current Gain (hFE) (Min) @ Ic, Vce
    1200 @ 100A 5V
    Vce Saturation (Max) @ Ib, Ic
    1.5V @ 1A, 100A
    Collector Emitter Breakdown Voltage
    120V
    Collector Emitter Saturation Voltage
    1.5V
    Emitter Base Voltage (VEBO)
    7V
    hFE Min
    1200
    VCEsat-Max
    2 V
    Fall Time-Max (tf)
    300ns
    Width
    25.4mm
    REACH SVHC
    No SVHC
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant
    Lead Free
    Lead Free

    Products Detail

    ESM2012DV Overview


    DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1200 @ 100A 5V DC current gain.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 7V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.When collector current reaches its maximum, it can reach 120A volts.

    ESM2012DV Features


    the DC current gain for this device is 1200 @ 100A 5V
    a collector emitter saturation voltage of 1.5V
    the vce saturation(Max) is 1.5V @ 1A, 100A
    the emitter base voltage is kept at 7V
    the current rating of this device is 120A


    ESM2012DV Applications


    There are a lot of STMicroelectronics
    ESM2012DV applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    ESM2012DV
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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