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    Part number
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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. MD2009DFX STMicroelectronics

    MD2009DFX [STMicroelectronics]

    MD2009DFX
    MD2009DFX

    Part No:

    MD2009DFX

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    NPN 150°C TJ 200?A 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole

    RoHS Status:

    Product FAQ

    1. Is MD2009DFX available for RFQ?

    Yes. MD2009DFX by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for MD2009DFX?

    Pricing for MD2009DFX can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of MD2009DFX?

    MD2009DFX is a STMicroelectronics Transistors with Packaging: Tube and DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A 5V and Collector Emitter Breakdown Voltage: 700V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for MD2009DFX?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can MD2009DFX be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to MD2009DFX?

    Yes. If MD2009DFX is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    MD2009DFX

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    ISOWATT218FX
    Number of Pins
    3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Terminal Finish
    Matte Tin (Sn)
    Additional Feature
    BUILT-IN BIAS RESISTORS
    Max Power Dissipation
    58W
    Base Part Number
    MD2009
    Pin Count
    3
    Number of Elements
    1
    Element Configuration
    Single
    Power Dissipation
    58W
    Case Connection
    ISOLATED
    Transistor Application
    AMPLIFIER
    Polarity/Channel Type
    NPN
    Transistor Type
    NPN
    Collector Emitter Voltage (VCEO)
    700V
    Max Collector Current
    10A
    DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 5.5A 5V
    Vce Saturation (Max) @ Ib, Ic
    2.8V @ 1.4A, 5.5A
    Collector Emitter Breakdown Voltage
    700V
    Emitter Base Voltage (VEBO)
    7V
    hFE Min
    5
    Continuous Collector Current
    10A
    Radiation Hardening
    No
    RoHS Status
    RoHS Compliant

    Products Detail

    MD2009DFX Overview


    This device has a DC current gain of 5 @ 5.5A 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 10A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.The maximum collector current is 10A volts.

    MD2009DFX Features


    the DC current gain for this device is 5 @ 5.5A 5V
    the vce saturation(Max) is 2.8V @ 1.4A, 5.5A
    the emitter base voltage is kept at 7V


    MD2009DFX Applications


    There are a lot of STMicroelectronics
    MD2009DFX applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Datasheets:

    MD2009DFXMD2009DFX-STMicroelectronics-datasheet-10838246.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
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