STBV32G-AP [STMicroelectronics]

STBV32G-AP Overview

In this device, the DC current gain is 5 @ 1A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 500mA, 1.5A.With the emitter base voltage set at 9V, an efficient operation can be achieved.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

STBV32G-AP Features

the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 1.5V @ 500mA, 1.5A
the emitter base voltage is kept at 9V

STBV32G-AP Applications

There are a lot of STMicroelectronics
STBV32G-AP applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting