STD3NM60N [STMicroelectronics]

STD3NM60N Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 86 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 188pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 3.3A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.

STD3NM60N Features

the avalanche energy rating (Eas) is 86 mJ
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 23 ns

STD3NM60N Applications

There are a lot of STMicroelectronics
STD3NM60N applications of single MOSFETs transistors.

• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification