Part No:
BD680A
Category:
Transistors
Description:
PNP - Darlington 150°C TJ 500?A 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Tube Through Hole
Package:
-
Production Status:
In Stock Status:
Specification
Transistor Element Material
Moisture Sensitivity Level (MSL)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Continuous Collector Current
Products Detail
BD680A Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 2.8V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 4A is necessary for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -4A.In this part, there is a transition frequency of 10MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 4A volts.
BD680A Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.8V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 10MHz
BD680A Applications
There are a lot of STMicroelectronics
BD680A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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