EVSTDRIVEG60015 [STMicroelectronics]

The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V, with undervoltage protection tailored for GaN HEMTs.

The EVSTDRIVEG60015 board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving the SGT120R65AL 75 mΩ typ., 650 V E-Mode GaN switches.

It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.

Spare footprints are also included to allow customizing the board for the final application, such as separate LIN and HIN input signals or single PWM signal, use of optional external bootstrap diode, separate supply for VCC, PVCC or BOOT and the use of low-side shunt resistor for peak current mode topologies.

The EVSTDRIVEG60015 is 50 x 70 mm wide, FR-4 PCB resulting in 25 °C/W Rth(J‑A) in still air.

• Half-Bridge topology featuring 600 V STDRIVEG600 gate driver
• Equipped with 75 mΩ typ, 650 V e-mode GaN HEMT
• GaN in 5x6 mm PowerFLAT HV package with Kelvin source
• HV bus up to 500 V
• 4.75 to 6.5 V VCC gate driver supply voltage, limited by GaN V_GS rating
• On-board adjustable deadtime generator to convert single PWM signal in independent High-Side and Low-Side deadtimes
• Separated inputs with external deadtime can also be used
• On-board 3.3 V regulator for external circuitry supply
• 25° C/W junction-to-ambient thermal resistance to evaluate large power topologies
• High frequency connector for GaN gate monitoring
• Optional low-side shunt
• RoHS compliant.