LET9060 [STMicroelectronics]

LET9060 Description

A lateral field-effect RF power MOSFET with a common source N-channel enhancement mode is called the LET9060. It is intended for industrial, commercial, and high gain applications. At frequencies up to 1 GHz, it runs in common source mode at 28 V. The PowerSO-10RF, the first true SMD plastic RF power package, houses the LET9060, which has the outstanding gain, linearity, and reliability of ST's most recent LDMOS technology. The LET9060 is the perfect option for base station applications because to its high linearity performance. The PowerSO-10 plastic package, which aims to provide excellent reliability, is the first high power SMD package to receive ST JEDEC approval. It has good RF characteristics and is simple to assemble, and it has been carefully tuned for RF demands.

LET9060 Features

• Outstanding thermal stability

• Config of common sources

• POUT = 60 W with a gain of 17.2 dB at 960 MHz and 28 V.

• New plastic package for RF

LET9060 Applications

Switching applications