Part No:
MJ3001
Category:
Transistors
Description:
NPN - Darlington 200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Bulk Chassis Mount
Package:
-
Production Status:
In Stock Status:
Specification
Mount
Chassis Mount, Through Hole
Transistor Element Material
Moisture Sensitivity Level (MSL)
Peak Reflow Temperature (Cel)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Continuous Collector Current
Products Detail
MJ3001 Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 4V @ 50mA, 10A.A 10A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 10A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 1MHz.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
MJ3001 Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 1MHz
MJ3001 Applications
There are a lot of STMicroelectronics
MJ3001 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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