SD56120M [STMicroelectronics]

Name: SD56120M
Brand: STMicroelectronics
SKU: SD56120M

Part No:

SD56120M

Category:

RF Transistors

Manufacturer:

STMicroelectronics

Description:

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Screw

Package / Case

M252

Number of Pins

5

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Max Operating Temperature

200°C

Min Operating Temperature

-65°C

Voltage - Rated DC

65V

Max Power Dissipation

236W

Terminal Form

FLAT

Current Rating

14A

Frequency

860MHz

Base Part Number

SD56120

Pin Count

4

JESD-30 Code

R-PDFM-F4

Number of Elements

2

Element Configuration

Dual

Operating Mode

ENHANCEMENT MODE

Power Dissipation

236W

Case Connection

SOURCE

Current - Test

400mA

Transistor Application

AMPLIFIER

Drain to Source Voltage (Vdss)

65V

Polarity/Channel Type

N-CHANNEL

Transistor Type

LDMOS

Continuous Drain Current (ID)

14A

Gate to Source Voltage (Vgs)

20V

Gain

16dB

Max Output Power

120W

Drain to Source Breakdown Voltage

65V

Input Capacitance

221pF

FET Technology

METAL-OXIDE SEMICONDUCTOR

Voltage - Test

32V

Min Breakdown Voltage

65V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

SD56120M Description

SD56120M N-channel Power MOSFET developed using SuperMESH technology. SD56120M MOSFET revolutionary, Avalanche-rugged, high-voltage Power technology relies on an original, exclusive vertical structure. It results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STMicroelectronics SD56120M is utilized in Switching applications.