STAC4932B Description

An N-channel MOS field-effect RF power transistor is the STAC4932B. It is designed for applications using 100 V pulses up to 250 MHz. This gadget is appropriate for usage in commercial, academic, and therapeutic settings. The most recent iteration of effective, patent-pending STAC package technology is utilized by the STAC4932B.

STAC4932B Features

? outstanding thermal stability

? Standard source push-pull arrangement

? POUT at 123 MHz is 1000 W minimum (often 1200 W) with 24.6 dB gain.

? 1 millisecond, 10% pulse conditions

? Compliant with European Directive 2002/95/EC

? STAC packaging technique for air-cavities

STAC4932B Applications

Switching applications