STD100NH03LT4 [STMicroelectronics]

STD100NH03LT4 Overview

There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 700 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4100pF @ 15V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 48 ns.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (5V 10V).

STD100NH03LT4 Features

the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 240A.

STD100NH03LT4 Applications

There are a lot of STMicroelectronics
STD100NH03LT4 applications of single MOSFETs transistors.

• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit