Part No:
STD10NM60ND
Category:
Transistors
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 600m ? @ 4A, 10V ±25V 577pF @ 50V 20nC @ 10V 600V TO-252-3, DPak (2 Leads + Tab), SC-63
Package:
-
Datasheet:
-
Production Status:
In Stock Status:
Specification
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material
Moisture Sensitivity Level (MSL)
Terminal Finish
Matte Tin (Sn) - annealed
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On,Min Rds On)
Continuous Drain Current (ID)
Gate to Source Voltage (Vgs)
Drain Current-Max (Abs) (ID)
Drain to Source Breakdown Voltage
Products Detail
STD10NM60ND Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 577pF @ 50V.This device has a continuous drain current (ID) of [8A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=650V, the drain-source breakdown voltage is 650V.A device's drain current is its maximum continuous current, and this device's drain current is 8A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 32 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 25V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
STD10NM60ND Features
a continuous drain current (ID) of 8A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)
STD10NM60ND Applications
There are a lot of STMicroelectronics
STD10NM60ND applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
Key Features
No key features available
Application scenarios
No application scenarios available
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