
BQ27441DRZR-G1AG4
Texas Instruments

MDmeshTM M2 technology was used to produce the STD12N65M2 N-channel Power MOSFET. STD12N65M2 has low on-resistance and optimal switching characteristics thanks to its strip layout and improved vertical structure, making it suited for the most demanding high efficiency converters.
Gate charge is really low.
The output capacitance profile (COSS) is excellent.
Avalanche-proofed to the nth degree
Zener-protected
Industrial Applications
No key features available
No application scenarios available
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