STD30NF03LT4 [STMicroelectronics]

Name: STD30NF03LT4
Brand: STMicroelectronics
SKU: STD30NF03LT4

Part No:

STD30NF03LT4

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 25m ? @ 15A, 10V ±20V 830pF @ 25V 18nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-65°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

25mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Additional Feature

LOW THRESHOLD

Voltage - Rated DC

30V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

30A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STD30N

Pin Count

3

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Power Dissipation-Max

50W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

50W

Case Connection

DRAIN

Turn On Delay Time

35 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 25V

Current - Continuous Drain (Id) @ 25°C

30A Tc

Gate Charge (Qg) (Max) @ Vgs

18nC @ 5V

Rise Time

205ns

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Fall Time (Typ)

240 ns

Turn-Off Delay Time

90 ns

Continuous Drain Current (ID)

30A

Threshold Voltage

1.7V

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

30V

REACH SVHC

No SVHC

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD30NF03LT4 Description

The "Single Feature SizeTM" strip-based technique used by STMicroelectronics to create this Power MOSFET is its most recent innovation. The resultant transistor exhibits remarkable manufacturing repeatability, robust avalanche properties, and extraordinarily high packing density for low on-resistance.