The STDRIVEG610 is a high-voltage half-bridge gate driver for N‑channel Enhancement Mode GaN.

The high-side driver section is designed to stand a voltage rail up to 600 V and can be easily supplied by the integrated bootstrap diode.

High current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG610 optimized for driving high-speed GaN.

The STDRIVEG610 features supply UVLOs tailored to fast startup and low-consumption soft-switching applications, but with full hard switching support and interlocking to avoid cross-conduction conditions. The high-side regulator is characterized by very short wake-up time to maximize the application efficiency during intermittent operation (burst mode).

The input pins extended range allows easy interfacing with controllers. A standby pin allows to reduce the power consumption during inactive periods or burst mode.

The STDRIVEG610 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.

• High voltage rail up to 600 V
• dV/dt transient immunity ±200 V/ns
• Driver with separated sink and source path for optimal driving:
  • 2.4 A and
    1.2 Ω sink
  • 1.0 A and
    3.7 Ω source
• High-side and low-side linear regulators for 6 V gate driving voltage
• Ultra fast high-side startup time: 300 ns
• 45 ns propagation delay, 15 ns minimum output pulse
• High switching frequency (> 1 MHz)
• Embedded 600 V bootstrap diode
• Full support of GaN hard-switching operation
• UVLO function on VCC, V_BO, and
  V_LS
• Separated logic inputs and shutdown pin
• Fault pin for overtemperature and UVLO reporting
• Stand-by function for low consumption mode
• Separated PGND for Kelvin source driving and current shunt compatibility
• 3.3 V to 20 V compatible inputs with hysteresis and pull-down