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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STE110NS20FD STMicroelectronics

    STE110NS20FD [STMicroelectronics]

    STE110NS20FD
    STE110NS20FD

    Part No:

    STE110NS20FD

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 24m ? @ 50A, 10V ±20V 7900pF @ 25V 504nC @ 10V ISOTOP

    RoHS Status:

    Product FAQ

    1. Is STE110NS20FD available for RFQ?

    Yes. STE110NS20FD by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STE110NS20FD?

    Pricing for STE110NS20FD can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STE110NS20FD?

    STE110NS20FD is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 110A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STE110NS20FD?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STE110NS20FD be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STE110NS20FD?

    Yes. If STE110NS20FD is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STE110NS20FD

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Chassis Mount, Screw
    Mounting Type
    Chassis Mount
    Package / Case
    ISOTOP
    Number of Pins
    4
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    4
    ECCN Code
    EAR99
    Terminal Finish
    Nickel (Ni)
    Additional Feature
    AVALANCHE RATED
    Voltage - Rated DC
    200V
    Technology
    MOSFET (Metal Oxide)
    Terminal Position
    UPPER
    Terminal Form
    UNSPECIFIED
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Reach Compliance Code
    not_compliant
    Current Rating
    110A
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Base Part Number
    STE1
    Pin Count
    4
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE WITH BUILT-IN DIODE
    Power Dissipation-Max
    500W Tc
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    500W
    Case Connection
    ISOLATED
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    7900pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    110A Tc
    Gate Charge (Qg) (Max) @ Vgs
    504nC @ 10V
    Rise Time
    130ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±20V
    Fall Time (Typ)
    140 ns
    Turn-Off Delay Time
    245 ns
    Continuous Drain Current (ID)
    110A
    Gate to Source Voltage (Vgs)
    20V
    Drain to Source Breakdown Voltage
    200V
    Avalanche Energy Rating (Eas)
    750 mJ
    RoHS Status
    RoHS Compliant

    Products Detail

    STE110NS20FD Description


    STMicroelectronics has developed a cutting-edge series of Power MOSFETs with exceptional performances using the most recent high voltage MESH OVERLAYTM technology. With the help of the company's exclusive edge termination structure and the newly-patentable STrip layout, the lowest RDS(ON) per area, remarkable avalanche and dv/dt capabilities, and unmatched gate charge and switching characteristics may be achieved.



    STE110NS20FD Features


    • 100% avalanche tested

    • Gate charge minimized

    • Low intrinsic capacitance

    • Extremely high dv/dt capability

    • Fast body-drain diode:low trr, Qrr

    • ± 20V gate to source voltage rating



    STE110NS20FD Applications


    • Industrial

    • Automotive

    • Personal electronics

    • Switching application


    Documents

    Datasheets:

    STE110NS20FD
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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