Name: STF100N10F7
Brand: STMicroelectronics
SKU: STF100N10F7

STF100N10F7 [STMicroelectronics]

Part No:

STF100N10F7

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 8m ? @ 22.5A, 10V ±20V 4369pF @ 50V 61nC @ 10V TO-220-3 Full Pack

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Factory Lead Time

13 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Resistance

80mOhm

Technology

MOSFET (Metal Oxide)

Base Part Number

STF100N

Number of Elements

1

Power Dissipation-Max

30W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

30W

Case Connection

ISOLATED

Turn On Delay Time

27 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

4369pF @ 50V

Current - Continuous Drain (Id) @ 25°C

45A Tc

Gate Charge (Qg) (Max) @ Vgs

61nC @ 10V

Rise Time

40ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

15 ns

Turn-Off Delay Time

46 ns

Continuous Drain Current (ID)

45A

JEDEC-95 Code

TO-220AB

Gate to Source Voltage (Vgs)

20V

Drain to Source Breakdown Voltage

100V

Pulsed Drain Current-Max (IDM)

180A

Avalanche Energy Rating (Eas)

400 mJ

Height

16.4mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STF100N10F7 Description

The STF100N10F7 power MOSFET, created by STMicroelectronics, allows you to switch between different lines in addition to amplification of electronic signals. It can dissipate up to 150000 mW of power. This gadget makes use of stripfet technology. The operating temperature range for this MOSFET transistor is -55 ??C to 175 ??C. The enhancement mode is used by this N channel MOSFET transistor.