Name: STF11N65M2
Brand: STMicroelectronics
SKU: STF11N65M2

STF11N65M2 [STMicroelectronics]

Part No:

STF11N65M2

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tube 670m ? @ 3.5A, 10V ±25V 410pF @ 100V 12.5nC @ 10V TO-220-3 Full Pack

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

16 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

329.988449mg

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Resistance

600mOhm

Technology

MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STF11

Number of Channels

1

Power Dissipation-Max

25W Tc

Turn On Delay Time

9.5 ns

FET Type

N-Channel

Input Capacitance (Ciss) (Max) @ Vds

410pF @ 100V

Current - Continuous Drain (Id) @ 25°C

7A Tc

Gate Charge (Qg) (Max) @ Vgs

12.5nC @ 10V

Rise Time

7.5ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±25V

Fall Time (Typ)

15 ns

Turn-Off Delay Time

26 ns

Continuous Drain Current (ID)

7A

Threshold Voltage

3V

Gate to Source Voltage (Vgs)

25V

Drain to Source Breakdown Voltage

650V

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Products Detail

STF11N65M2 Description

The STF11N65M2 is an N-channel Power MOSFET that was created utilizing MDmesh M2 technology. The STF11N65M2 has low on-resistance and optimal switching characteristics due to its strip layout and an improved vertical structure, making it suited for the most demanding high-efficiency converters.