STFV3N150 [STMicroelectronics]

STFV3N150 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 939pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.5A amps.In this device, the drain-source breakdown voltage is 1.5kV and VGS=1.5kV, so the drain-source breakdown voltage is 1.5kV in this case.It is [45 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 10A.A turn-on delay time of 24 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.To operate this transistor, you will need a 1500V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

STFV3N150 Features

the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 1.5kV voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 10A.
a 1500V drain to source voltage (Vdss)

STFV3N150 Applications

There are a lot of STMicroelectronics
STFV3N150 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies