Name: STGD10NC60ST4
Brand: STMicroelectronics
SKU: STGD10NC60ST4

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

JESD-609 Code

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

Terminal Finish

Matte Tin (Sn) - annealed

Max Power Dissipation

60W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGD10

Pin Count

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Number of Elements

Element Configuration

Single

Input Type

Standard

Power - Max

60W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

18A

Collector Emitter Breakdown Voltage

600V

Max Breakdown Voltage

600V

Turn On Time

22.5 ns

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 5A

Turn Off Time-Nom (toff)

560 ns

Gate Charge

18nC

Current - Collector Pulsed (Icm)

25A

Td (on/off) @ 25°C

19ns/160ns

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

RoHS Status

RoHS Compliant

STGD10NC60ST4 Description

STGD10NC60ST4 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes STGD10NC60ST4 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

STGD10NC60ST4 Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

STGD10NC60ST4 Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

No key features available