
89H16NT16G2ZCHLG
RENESAS

This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
? AEC-Q101 qualified
? Among the lowest RDS(on) on the market
? Excellent FoM (figure of merit)
? Low Crss/Ciss ratio for EMI immunity
? High avalanche ruggedness
? Wettable flank package
? Switching applications
No key features available
No application scenarios available
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