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STB21NM60N - STMicroelectronics | Electronic Components

Name: STB21NM60N
Brand: STMicroelectronics
SKU: STB21NM60N
Availability: InStock

Product FAQ

1. Is STB21NM60N available for RFQ?

Yes. STB21NM60N by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for STB21NM60N?

Pricing for STB21NM60N can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of STB21NM60N?

STB21NM60N is a STMicroelectronics Transistors with Packaging: Tape & Reel (TR) and Current - Continuous Drain (Id) @ 25°C: 17A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for STB21NM60N?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can STB21NM60N be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

STB21NM60N Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1900pF @ 50V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 17A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 84 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 68A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 25V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STB21NM60N Features

a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 84 ns
based on its rated peak drain current 68A.