STL190N4F7AG Description

This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

STL190N4F7AG Features

Designed for automotive applications and

AEC-Q101 qualified

Among the lowest RDS(on) on the market

Excellent FoM (figure of merit)

Low Crss/Ciss ratio for EMI immunity

High avalanche ruggedness

Wettable flank package

STL190N4F7AG Applications

Switching applications