Name: STL90N3LLH6
Brand: STMicroelectronics
SKU: STL90N3LLH6

STL90N3LLH6 [STMicroelectronics]

Part No:

STL90N3LLH6

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 4.5m ? @ 12A, 10V ±20V 1690pF @ 25V 17nC @ 4.5V 8-PowerVDFN

Package:

-

RoHS Status:

Datasheet:

Production Status:

In Stock Status:

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

20 Weeks

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

4.5mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Additional Feature

ULTRA-LOW RESISTANCE

Technology

MOSFET (Metal Oxide)

Terminal Position

DUAL

Peak Reflow Temperature (Cel)

260

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STL90

Pin Count

JESD-30 Code

R-XDSO-N5

Number of Elements

Power Dissipation-Max

60W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

60W

Case Connection

DRAIN

Turn On Delay Time

9.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1690pF @ 25V

Current - Continuous Drain (Id) @ 25°C

90A Tc

Gate Charge (Qg) (Max) @ Vgs

17nC @ 4.5V

Rise Time

30ns

Drive Voltage (Max Rds On,Min Rds On)

4.5V 10V

Vgs (Max)

±20V

Fall Time (Typ)

12 ns

Turn-Off Delay Time

37 ns

Continuous Drain Current (ID)

90A

Threshold Voltage

1.7V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

24A

Drain to Source Breakdown Voltage

30V

Pulsed Drain Current-Max (IDM)

96A

Nominal Vgs

1.7 V

Length

5mm

Width

6mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

Description

The STL90N3LLH6 is an N-channel 30 V, 0.0038 ? typ., 24 A STripFET? VI DeepGATE? Power MOSFET in PowerFLAT? 5x6 package. This product is an N-channel Power MOSFET made with a new gate structure and the 6th generation of STripFET DeepGATE technology. The Power MOSFET that results has the lowest RDS(on) among all packages.

Features

High avalanche ruggedness
Low gate drive power losses
Very low switching gate charge
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)

Applications

Switching applications
Solar inverters
Automotive applications
Small motor control
Switch Mode Power Supplies (SMPS)

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

Datasheets:

STL90N3LLH6 STL90N3LLH6-STMicroelectronics-datasheet-10838715.pdf STL90N3LLH6-STMicroelectronics-datasheet-21815534.pdf STL90N3LLH6-STMicroelectronics-datasheet-10404465.pdf STL90N3LLH6-STMicroelectronics-datasheet-14061257.pdf

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.