
MT60B2G8HB-48B:A
Micron

This N-channel Power MOSFET utilizes STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Designed for automotive applications and
AEC-Q101 qualified
Among the lowest RDS(on) on the market
The excellent figure of merit (FOM)
Low Cross/Ciss ratio for EMI immunity
High avalanche ruggedness
Wettable flank package
Switching applications
No key features available
No application scenarios available
Looking for Pricing? Contact us for volume pricing.
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
IMPORTANT NOTICE
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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