STN888 [STMicroelectronics]

STN888 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.2V @ 500mA, 10A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 5A volts.

STN888 Features

the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.2V @ 500mA, 10A
the emitter base voltage is kept at 6V

STN888 Applications

There are a lot of STMicroelectronics
STN888 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting