STD4N80K5 [STMicroelectronics]

Name: STD4N80K5
Brand: STMicroelectronics
SKU: STD4N80K5

Part No:

STD4N80K5

Category:

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 2.5 ? @ 1.5A, 10V ±30V 175pF @ 100V 10.5nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status:

Datasheet:

Stock Status:

Available for RFQ

Pricing:

Request Volume Pricing

Quote Response:

Within 24 Hours

Shipping:

In-stock parts ship in 1–2 business days

Specification

Type

Parameter

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Factory Lead Time

17 Weeks

Contact Plating

Tin

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Pins

3

Transistor Element Material

SILICON

Operating Temperature

-55°C~150°C TJ

Packaging

Cut Tape (CT)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Resistance

2.5Ohm

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Base Part Number

STD4N

JESD-30 Code

R-PSSO-G2

Number of Elements

1

Number of Channels

1

Power Dissipation-Max

60W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

60W

Case Connection

DRAIN

Turn On Delay Time

16.5 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

175pF @ 100V

Current - Continuous Drain (Id) @ 25°C

3A Tc

Gate Charge (Qg) (Max) @ Vgs

10.5nC @ 10V

Rise Time

15ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±30V

Fall Time (Typ)

21 ns

Turn-Off Delay Time

36 ns

Continuous Drain Current (ID)

3A

Gate to Source Voltage (Vgs)

30V

Drain Current-Max (Abs) (ID)

3A

Drain to Source Breakdown Voltage

800V

Avalanche Energy Rating (Eas)

74.5 mJ

Height

2.4mm

Length

6.6mm

Width

6.2mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STD4N80K5 Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh? K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power

density and high efficiency.

STD4N80K5 Features

Industry?s lowest RDS(on) x area

Industry?s best figure of merit (FOM)

Ultra-low gate charge

100% avalanche tested

Zener-protected

STD4N80K5 Applications

Switching applications

Documents

Datasheets:

STx4N80K5 STD4N80K5-STMicroelectronics-datasheet-62308071.pdf STD4N80K5-STMicroelectronics-datasheet-17277218.pdf

Product FAQ

1. Is STD4N80K5 available for RFQ?

Yes. STD4N80K5 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

2. Why is there no fixed price for STD4N80K5?

Pricing for STD4N80K5 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

3. What are the key specifications of STD4N80K5?

STD4N80K5 is a STMicroelectronics Transistors with Packaging: Cut Tape (CT) and Current - Continuous Drain (Id) @ 25°C: 3A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

4. How fast can I get a quote for STD4N80K5?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

5. How soon can STD4N80K5 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

6. Can you suggest alternatives to STD4N80K5?

Yes. If STD4N80K5 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

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