STP24N65M2 [STMicroelectronics]

STP24N65M2 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 650 mJ.The maximum input capacitance of this device is 1060pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 16A.There is no pulsed drain current maximum for this device based on its rated peak drain current 64A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 650V.The drain-to-source voltage (Vdss) of this transistor needs to be at 650V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

STP24N65M2 Features

the avalanche energy rating (Eas) is 650 mJ
a continuous drain current (ID) of 16A
based on its rated peak drain current 64A.
a 650V drain to source voltage (Vdss)

STP24N65M2 Applications

There are a lot of STMicroelectronics
STP24N65M2 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,