STP95N2LH5 [STMicroelectronics]

STP95N2LH5 Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 165 mJ.The maximum input capacitance of this device is 1817pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.As shown in the table below, the drain current of this device is 95A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (5V 10V), this device helps reduce its power consumption.

STP95N2LH5 Features

the avalanche energy rating (Eas) is 165 mJ
a continuous drain current (ID) of 80A
a 25V drain to source voltage (Vdss)

STP95N2LH5 Applications

There are a lot of STMicroelectronics
STP95N2LH5 applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,