STPSC30G065L2Y [STMicroelectronics]

The SiC diode STPSC30G065L2Y, housed in HU3PAK, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Based on latest technology optimization, this diode has an improved forward surge current capability, making it ideal for use in PFC, where this ST SiC diode boosts the performance in hard switching conditions. Using the latest design improvement of the “G” series of ST SiC diodes, as well as implemented tests in production, this diode is becoming the reference point in the combination of efficiency and application robustness to the application design.

• AEC-Q101 qualified and PPAP capable
• No reverse recovery charge in application current range
• Switching behavior independent of temperature
• High forward surge capability
• Operating T_j from -55 °C to 175 °C
• SMD with top side cooling package (HU3PAK)
• ECOPACK2 compliant component