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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STS8DN6LF6AG STMicroelectronics

    STS8DN6LF6AG [STMicroelectronics]

    STS8DN6LF6AG
    STS8DN6LF6AG

    Part No:

    STS8DN6LF6AG

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package

    RoHS Status:

    Product FAQ

    1. Is STS8DN6LF6AG available for RFQ?

    Yes. STS8DN6LF6AG by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STS8DN6LF6AG?

    Pricing for STS8DN6LF6AG can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STS8DN6LF6AG?

    STS8DN6LF6AG is a STMicroelectronics Transistors with Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED and Drain-source On Resistance-Max: 0.026 Ω. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STS8DN6LF6AG?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STS8DN6LF6AG be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STS8DN6LF6AG?

    Yes. If STS8DN6LF6AG is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STS8DN6LF6AG

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    RoHS Status
    RoHS Compliant
    Part Life Cycle Code
    Active
    Reach Compliance Code
    compliant
    ECCN Code
    EAR99
    Factory Lead Time
    26 Weeks
    Avalanche Energy Rating (Eas)
    72 mJ
    Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
    DS Breakdown Voltage-Min
    60 V
    Drain Current-Max (ID)
    8 A
    Drain-source On Resistance-Max
    0.026 Ω
    FET Technology
    METAL-OXIDE SEMICONDUCTOR
    JESD-30 Code
    R-PDSO-G8
    Number of Elements
    2
    Number of Terminals
    8
    Operating Mode
    ENHANCEMENT MODE
    Operating Temperature-Max
    175 °C
    Operating Temperature-Min
    -55 °C
    Package Body Material
    PLASTIC/EPOXY
    Package Shape
    RECTANGULAR
    Package Style
    SMALL OUTLINE
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Polarity/Channel Type
    N-CHANNEL
    Power Dissipation-Max (Abs)
    3.2 W
    Pulsed Drain Current-Max (IDM)
    32 A
    Reference Standard
    AEC-Q101
    Surface Mount
    YES
    Terminal Form
    GULL WING
    Terminal Position
    DUAL
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Transistor Application
    SWITCHING
    Transistor Element Material
    SILICON

    Products Detail

    STS8DN6LF6AG Description


    STS8DN6LF6AG is an N-channel Power MOSFET transistor from the manufacturer STMicroelectronics with a drain to source voltage of 60V. The operating temperature of the STS8DN6LF6AG is -55°C~175°C TJ and its maximum power dissipation is 3.2W. This product is a twin N-channel Power MOSFET with a novel trench gate structure made with STripFETTM F6 technology. In all packages, the resultant Power MOSFET displays extremely low RDS(on).



    STS8DN6LF6AG Features


    • AEC-Q101 qualified

    • Very low on-resistance

    • Very low gate charge

    • High avalanche ruggedness

    • Low gate drive power loss

    • Logic level



    STS8DN6LF6AG Applications


    • Power Management

    • Consumer Electronics

    • Portable Devices

    • Industrial

    • Switching applications


    Documents

    Datasheets:

    STS8DN6LF6AG Datasheet
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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