Part No:
STSA1805-AP
Category:
Transistors
Description:
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
Package:
-
Production Status:
In Stock Status:
Specification
Lifecycle Status
ACTIVE (Last Updated: 6 months ago)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material
Moisture Sensitivity Level (MSL)
Collector Emitter Voltage (VCEO)
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector Cutoff (Max)
Vce Saturation (Max) @ Ib, Ic
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Collector Base Voltage (VCBO)
Emitter Base Voltage (VEBO)
Products Detail
STSA1805-AP Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 200mA, 5A.Keeping the emitter base voltage at 7V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).150MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
STSA1805-AP Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 150MHz
STSA1805-AP Applications
There are a lot of STMicroelectronics
STSA1805-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
Key Features
No key features available
Application scenarios
No application scenarios available
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