STSJ50NH3LL [STMicroelectronics]

STSJ50NH3LL Overview

The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 150 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 965pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 50A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 12A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 18 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 16V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

STSJ50NH3LL Features

the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 18 ns

STSJ50NH3LL Applications

There are a lot of STMicroelectronics
STSJ50NH3LL applications of single MOSFETs transistors.

• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies