STT818B Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 1V.The collector emitter saturation voltage is -210mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 20mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -3A.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.

STT818B Features

the DC current gain for this device is 100 @ 500mA 1V
a collector emitter saturation voltage of -210mV
the vce saturation(Max) is 500mV @ 20mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -3A

STT818B Applications

There are a lot of STMicroelectronics
STT818B applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting