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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. STW11NB80 STMicroelectronics

    STW11NB80 [STMicroelectronics]

    STW11NB80
    STW11NB80

    Part No:

    STW11NB80

    Category:

    Transistors

    Manufacturer:

    STMicroelectronics

    Description:

    MOSFET (Metal Oxide) N-Channel Tube 800m ? @ 5.5A, 10V ±30V 2900pF @ 25V 70nC @ 10V TO-247-3

    RoHS Status:

    Product FAQ

    1. Is STW11NB80 available for RFQ?

    Yes. STW11NB80 by STMicroelectronics is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for STW11NB80?

    Pricing for STW11NB80 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of STW11NB80?

    STW11NB80 is a STMicroelectronics Transistors with Packaging: Tube and Current - Continuous Drain (Id) @ 25°C: 11A Tc and Drive Voltage (Max Rds On,Min Rds On): 10V. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for STW11NB80?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can STW11NB80 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to STW11NB80?

    Yes. If STW11NB80 is unavailable, obsolete, or does not meet your required lead time, we can help check similar STMicroelectronics Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    STW11NB80

    Manufacturer:

    STMicroelectronics

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mount
    Through Hole
    Mounting Type
    Through Hole
    Package / Case
    TO-247-3
    Transistor Element Material
    SILICON
    Operating Temperature
    150°C TJ
    Packaging
    Tube
    JESD-609 Code
    e3
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    Number of Terminations
    3
    ECCN Code
    EAR99
    Terminal Finish
    Matte Tin (Sn)
    Voltage - Rated DC
    800V
    Technology
    MOSFET (Metal Oxide)
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Reach Compliance Code
    not_compliant
    Current Rating
    11A
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Base Part Number
    STW11N
    Pin Count
    3
    JESD-30 Code
    R-PSFM-T3
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Power Dissipation-Max
    190W Tc
    Element Configuration
    Single
    Operating Mode
    ENHANCEMENT MODE
    Power Dissipation
    190W
    FET Type
    N-Channel
    Transistor Application
    SWITCHING
    Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 25V
    Current - Continuous Drain (Id) @ 25°C
    11A Tc
    Gate Charge (Qg) (Max) @ Vgs
    70nC @ 10V
    Rise Time
    13ns
    Drive Voltage (Max Rds On,Min Rds On)
    10V
    Vgs (Max)
    ±30V
    Fall Time (Typ)
    23 ns
    Continuous Drain Current (ID)
    11A
    Gate to Source Voltage (Vgs)
    30V
    Drain-source On Resistance-Max
    0.8Ohm
    Drain to Source Breakdown Voltage
    800V
    Pulsed Drain Current-Max (IDM)
    44A
    Avalanche Energy Rating (Eas)
    500 mJ
    RoHS Status
    RoHS Compliant
    Lead Free
    Contains Lead

    Products Detail

    STW11NB80 Description


    The  STMicroelectronics STW11NB80 MOSFET has used the latest high voltage MESH OVERLAYTM process, SGS-Thomson which has designed an advanced family of power MOSFETs with outstanding performances. The new patent-pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. 



    STW11NB80 Features


    • Typical RDS(ON)=0.65 ?

    • Extremely high dv/dt capability

    • ± 30V Gate to the source voltage rating

    • 100% avalanche tested

    • Gate charge minimized



    STW11NB80 Applications


    • High current, high-speed switching

    • Switch-mode power supplies (SMPS)

    • DC-AC converters for welding

    • Equipment and uninterruptible

    • Power supplies and motor drive


    Documents

    Datasheets:

    STW11NB80
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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