
K4B2G1646F-BCNB
SAMSUNG

These high voltage N-channel Power MOSFETs are part of the MDmesh? DM6 fast
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) * area with one of the most effective switching behaviors
available in the market for the most demanding high efficiency bridge topologies and
ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Switching applications
No key features available
No application scenarios available
Looking for Pricing? Contact us for volume pricing.
Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.
IMPORTANT NOTICE
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

K4B2G1646F-BCNB
SAMSUNG

K4FBE3D4HM-THCL
SAMSUNG

K4AAG165WA-BCWE
SAMSUNG

TMS320F28334ZJZS
Texas Instruments

MT29F16G08ABACAWP-ITZ:C
Micron

PCI1003
Microchip

MTFC4GACAJCN-4M IT
Micron

UCC28070APW
Texas Instruments

MT41K512M8DA-107 IT:P
Micron

MT25QU256ABA1EW7-0SIT
Micron
No recently viewed products