Name: STB40NF10T4
Brand: STMicroelectronics
SKU: STB40NF10T4

STB40NF10T4 [STMicroelectronics]

Part No:

STB40NF10T4

Transistors

Manufacturer:

STMicroelectronics

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 28m ? @ 25A, 10V ±20V 1780pF @ 25V 80nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Package:

-

RoHS Status:

Datasheet:

-

Production Status:

In Stock Status:

Specification

Type

Parameter

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins

Transistor Element Material

SILICON

Operating Temperature

-50°C~175°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

ECCN Code

EAR99

Resistance

28mOhm

Terminal Finish

Matte Tin (Sn) - annealed

Voltage - Rated DC

100V

Technology

MOSFET (Metal Oxide)

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

245

Current Rating

50A

Time@Peak Reflow Temperature-Max (s)

Base Part Number

STB40N

Pin Count

JESD-30 Code

R-PSSO-G2

Number of Elements

Power Dissipation-Max

150W Tc

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Power Dissipation

150W

Case Connection

DRAIN

Turn On Delay Time

28 ns

FET Type

N-Channel

Transistor Application

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds

1780pF @ 25V

Current - Continuous Drain (Id) @ 25°C

50A Tc

Gate Charge (Qg) (Max) @ Vgs

80nC @ 10V

Rise Time

63ns

Drive Voltage (Max Rds On,Min Rds On)

10V

Vgs (Max)

±20V

Fall Time (Typ)

28 ns

Turn-Off Delay Time

84 ns

Continuous Drain Current (ID)

50A

Threshold Voltage

2.8V

Gate to Source Voltage (Vgs)

20V

Drain Current-Max (Abs) (ID)

40A

Drain to Source Breakdown Voltage

100V

Pulsed Drain Current-Max (IDM)

200A

Height

4.6mm

Length

10.75mm

Width

10.4mm

REACH SVHC

No SVHC

Radiation Hardening

RoHS Status

RoHS Compliant

Lead Free

Products Detail

STB40NF10T4 Description

The STB40NF10T4 is a STripFET? II N-channel Power MOSFET developed using STMicroelectronic's unique Single Feature Size? strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility. The operating junction and storage temperature are between -55 and 175?. The MOSFET STB40NF10T4 is in the TO-263 package with 150W power dissipation.

STB40NF10T4 Features

Exceptional dV/dt capability
Low gate charge at 100°C
100% Avalanche tested
Application-oriented characterization
-50 to 175°C Operating junction temperature range

STB40NF10T4 Applications

Power Management
Industrial
Switching application
Induction furnaces
Communication devices

Key Features

No key features available

Application scenarios

No application scenarios available

Documents

No documents available

RFQ

Looking for Pricing? Contact us for volume pricing.

Shipping & Warranty

Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

Unishop Global Export: 1-7 days, $40.00

Guaranteed Delivery: Door-to-door in 30 days

Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

Feature

30-Day Guarantee
Fasted Delivery
Hassle-Free Returns
Secure payment method

IMPORTANT NOTICE

Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.