
K4RAH165VB-BIWM
SAMSUNG

The NexFET? power MOSFET has been designed Continuous Drain Current, TC = 25°C 100 A
ID to minimize losses in power conversion applications.
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated Qgd Gate Charge Gate to Drain 3.5 nC
Pb Free Terminal Plating VGS = 4.5V 2.9 m?
RoHS Compliant VGS = 10V 2.2 m?
Halogen Free
SON 5mm x 6mm Plastic Package
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Control FET Applications
No key features available
No application scenarios available
No documents available
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Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)
Unishop Global Export: 1-7 days, $40.00
Guaranteed Delivery: Door-to-door in 30 days
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