CSD25303W1015 Overview

A device's maximum input capacitance is 435pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 11.3 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 3.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

CSD25303W1015 Features

a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 11.3 ns
a 20V drain to source voltage (Vdss)

CSD25303W1015 Applications

There are a lot of Texas Instruments
CSD25303W1015 applications of single MOSFETs transistors.

• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Lighting, Server, Telecom and UPS.
• DC-to-DC converters