OP803TXV [TT Electronics]

Each device in this series consists of a high reliability NPN silicon phototransistor mounted in a hermetically sealed TO-18 package, which offers high power dissipation and superior hostile environment operation. Device lensing creates a 12° angle when measured from the optical axis to the half power point. These devices can be matched with a solid-state infrared source (such as the high resolution OP235 and OP236 series of IREDs), or can be used to sense infrared content in a visible light source (such as a tungsten bulb or sunlight) for automatic brightness control. TX and TXV devices are processed to MIL-PRF-19500.