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    Part number
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    1. Home/
    2. All Categories/
    3. Discrete Semiconductors/
    4. Transistors/
    5. 2N3646 Unknown

    2N3646 [Unknown]

    2N3646
    2N3646

    Part No:

    2N3646

    Category:

    Transistors

    Manufacturer:

    Unknown

    Description:

    NPN -65°C~150°C TJ 500nA 1 Elements SILICON NPN TO-106-3 Domed Bulk Through Hole

    RoHS Status:

    Product FAQ

    1. Is 2N3646 available for RFQ?

    Yes. 2N3646 by Unknown is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for 2N3646?

    Pricing for 2N3646 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of 2N3646?

    2N3646 is a Unknown Transistors with Packaging: Bulk and Voltage - Collector Emitter Breakdown (Max): 15V and DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA 400mV. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for 2N3646?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can 2N3646 be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to 2N3646?

    Yes. If 2N3646 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Unknown Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    2N3646

    Manufacturer:

    Unknown

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Mounting Type
    Through Hole
    Package / Case
    TO-106-3 Domed
    Surface Mount
    NO
    Transistor Element Material
    SILICON
    Operating Temperature
    -65°C~150°C TJ
    Packaging
    Bulk
    JESD-609 Code
    e0
    Pbfree Code
    no
    Part Status
    Obsolete
    Moisture Sensitivity Level (MSL)
    1 (Unlimited)
    ECCN Code
    EAR99
    Terminal Finish
    Tin/Lead (Sn/Pb)
    HTS Code
    8541.21.00.75
    Peak Reflow Temperature (Cel)
    NOT SPECIFIED
    Reach Compliance Code
    not_compliant
    Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
    Qualification Status
    Not Qualified
    Number of Elements
    1
    Configuration
    SINGLE
    Power - Max
    200mW
    Transistor Application
    SWITCHING
    Polarity/Channel Type
    NPN
    Transistor Type
    NPN
    DC Current Gain (hFE) (Min) @ Ic, Vce
    30 @ 30mA 400mV
    Current - Collector Cutoff (Max)
    500nA
    Vce Saturation (Max) @ Ib, Ic
    500mV @ 30mA, 300mA
    Voltage - Collector Emitter Breakdown (Max)
    15V
    Current - Collector (Ic) (Max)
    200mA
    Transition Frequency
    350MHz
    Frequency - Transition
    350MHz
    Power Dissipation-Max (Abs)
    0.2W
    Turn Off Time-Max (toff)
    28ns
    Turn On Time-Max (ton)
    18ns
    RoHS Status
    RoHS Compliant

    Products Detail

    2N3646 Overview


    The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 30 @ 30mA 400mV.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.A transition frequency of 350MHz is present in the part.A 15V maximal voltage - Collector Emitter Breakdown is present in the device.

    2N3646 Features


    the DC current gain for this device is 30 @ 30mA 400mV
    the vce saturation(Max) is 500mV @ 30mA, 300mA
    a transition frequency of 350MHz


    2N3646 Applications


    There are a lot of Central Semiconductor Corp
    2N3646 applications of single BJT transistors.


    • Inverter
    • Interface
    • Driver
    • Muting

    Documents

    Environmental Information:

    RoHS3 Cert
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
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      Fasted Delivery
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