NTE2314 [Unknown]

NTE2314 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A, 2V.When VCE saturation is 500mV @ 400mA, 8A, transistor means Ic has reached transistors maximum value (saturated).Supplier package TO-3P contains the product.The device has a 50 V maximal voltage - Collector Emitter Breakdown.

NTE2314 Features

the DC current gain for this device is 100 @ 1A, 2V
the vce saturation(Max) is 500mV @ 400mA, 8A
the supplier device package of TO-3P

NTE2314 Applications

There are a lot of NTE Electronics, Inc
NTE2314 applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting