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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRCZ44PBF Siliconix

    IRCZ44PBF [Siliconix]

    IRCZ44PBF
    IRCZ44PBF

    Part No:

    IRCZ44PBF

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    HEXFET® Power MOSFET with Dynamic dv/dt Rating, Current Sense DSS, 175°C Operating Temperature, Fast Switching, Ease of Paralleling, Simple Drive Requirements.

    Datasheet:

    Product FAQ

    1. Is IRCZ44PBF available for RFQ?

    Yes. IRCZ44PBF by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRCZ44PBF?

    Pricing for IRCZ44PBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRCZ44PBF?

    IRCZ44PBF is a Siliconix Transistors with Sensing Cell Output Capacitance: 9.0pF and Reverse Transfer Capacitance: 200pF. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRCZ44PBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRCZ44PBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRCZ44PBF?

    Yes. If IRCZ44PBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRCZ44PBF

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Power Dissipation
    150W
    Gate Source Voltage
    ±20V
    Pulsed Drain Current
    210A
    Gate Threshold Voltage
    2.0V ~ 4.0V
    Input Capacitance
    2500pF
    Output Capacitance
    1200pF
    Total Gate Charge
    95 nC
    Rds On
    0.028Ω
    Reverse Transfer Capacitance
    200pF
    Operating Temperature
    -55°C ~ +175°C
    Avalanche Energy
    30 mJ
    Breakdown Voltage
    60V
    Breakdown Voltage Temp Coeff
    0.060V/°C
    Continuous Source Current
    50A
    Current Sensing Ratio Max
    2720
    Current Sensing Ratio Min
    2460
    Derating Factor
    1.0W/°C
    Diode Forward Voltage
    2.5V
    Drain Current 100C
    37A
    Drain Current 25C
    50A
    Drain Source Leakage 150C
    250µA
    Drain Source Leakage 25C
    25µA
    Dvdt Recovery
    4.5V/ns
    Fall Time
    86 ns
    Forward Transconductance
    18 S
    Gate Drain Charge
    46 nC
    Gate Source Charge
    27 nC
    Gate Source Leakage Forward
    100 nA
    Gate Source Leakage Reverse
    -100 nA
    Internal Drain Inductance
    4.5nH
    Internal Source Inductance
    7.5nH
    Mounting Torque
    10 lbf•in (1.1 N•m)
    Pulsed Source Current
    210A
    Reverse Recovery Charge Max
    2.8 nC
    Reverse Recovery Charge Typ
    1.2 nC
    Reverse Recovery Time
    300 ns
    Rise Time
    120 ns
    Rθcs
    0.50°C/W
    Rθja
    62°C/W
    Rθjc
    1.0°C/W
    Sensing Cell Output Capacitance
    9.0pF
    Soldering Temperature
    300°C (1.6mm from case)
    Turn Off Delay
    55 ns
    Turn On Delay
    19 ns

    Products Detail

    Third Generation HEXFETs from International Rectifier provide the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSense device provides an accurate fraction of the drain current through additional leads for control or protection, exhibiting similar electrical/thermal characteristics as IRF-series equivalents. Kelvin source connection eliminates common source inductance issues in high-current switching applications.

    Key Features

    • Dynamic dv/dt Rating, Current Sense DSS, 175°C Operating Temperature, Low On-Resistance (0.028Ω), Fast Switching, Ease of Paralleling, Simple Drive Requirements, HEXSense Current Sensing, Kelvin Source Connection

    Documents

    Datasheets:

    IRCZ44IRCZ44PBF-Vishay-datasheet-7761.pdfIRCZ44PBF-Vishay-datasheet-78289.pdfIRCZ44PBF-Vishay-datasheet-11840281.pdf

    RohsStatement:

    Vishay-company-15.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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