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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRF734PBF Siliconix

    IRF734PBF [Siliconix]

    IRF734PBF
    IRF734PBF

    Part No:

    IRF734PBF

    Category:

    Transistors

    Manufacturer:

    Siliconix

    Description:

    Third generation Power MOSFETs from Vishay provide the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Product FAQ

    1. Is IRF734PBF available for RFQ?

    Yes. IRF734PBF by Siliconix is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRF734PBF?

    Pricing for IRF734PBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRF734PBF?

    IRF734PBF is a Siliconix Transistors with Thermal Resistance Junction To Ambient: 62°C/W and Body Diode Reverse Recovery Charge Max: 2.7 µC. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRF734PBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRF734PBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRF734PBF?

    Yes. If IRF734PBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Siliconix Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRF734PBF

    Manufacturer:

    Siliconix

    Looking for Pricing? Contact us for volume pricing.

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    62°C/W
    Power Dissipation
    74W
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    3.1A
    Continuous Drain Current (25C)
    4.9A
    Drain Source Voltage
    450V
    Pulsed Drain Current
    20A
    Thermal Resistance Junction To Case
    1.7°C/W
    Input Capacitance
    680pF
    Output Capacitance
    190pF
    Total Gate Charge
    45 nC
    Reverse Transfer Capacitance
    75pF
    Operating Temperature
    -55°C ~ 150°C
    Package
    TO-220
    RoHS Status
    RoHS Compliant
    Body Diode Reverse Recovery Charge Max
    2.7 µC
    Body Diode Reverse Recovery Time Max
    690 ns
    Body Diode Voltage Max
    2.0V
    Continuous Source Drain Diode Current
    4.9A
    Drain Source Breakdown Voltage Min
    450V
    Drain Source On Resistance
    1.2Ω
    Fall Time
    21 ns
    Forward Transconductance Min
    3.0 S
    Gate Drain Charge Max
    24 nC
    Gate Source Charge Max
    6.6 nC
    Gate Source Leakage Max
    ±100 nA
    Gate Source Threshold Voltage
    2.0V ~ 4.0V
    Internal Drain Inductance Typ
    4.5nH
    Internal Source Inductance Typ
    7.5nH
    Linear Derating Factor
    0.59W/°C
    Mounting Torque
    10 lbf·in, 1.1 N·m
    Peak Diode Recovery Dv Dt
    4.0V/ns
    Pulsed Diode Forward Current
    20A
    Repetitive Avalanche Current
    4.9A
    Repetitive Avalanche Energy
    7.4 mJ
    Rise Time
    22 ns
    Single Pulse Avalanche Energy
    330 mJ
    Soldering Peak Temperature
    300°C
    Thermal Resistance Case To Sink
    0.50°C/W
    Turn Off Delay Time
    40 ns
    Turn On Delay Time
    5.9 ns
    Zero Gate Voltage Drain Current Max
    25µA

    Products Detail

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Features include dynamic dV/dt rating, repetitive avalanche rated, fast switching, ease of paralleling, simple drive requirements, and lead (Pb)-free construction.

    Key Features

    • Dynamic dV/dt Rating, Repetitive Avalanche Rated, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Lead (Pb)-free, V_DS=450V, R_DS(on)=1.2Ω (at V_GS=10V), Q_g (Max.)=45nC, Q_gs=6.6nC, Q_gd=24nC, Configuration: Single

    Documents

    Datasheets:

    IRF734, SiHF734

    Other Related Documents:

    Packaging Information

    RohsStatement:

    Vishay-company-15.pdf
    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    • 30-Day Guarantee
      30-Day Guarantee
    • Fasted Delivery
      Fasted Delivery
    • Hassle-Free Returns
      Hassle-Free Returns
    • Secure payment method
      Secure payment method

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