IRF840BPBF [Vishay]

N-Channel MOSFET featuring low area specific on-resistance, low input capacitance (Ciss), reduced capacitive switching losses, high body diode ruggedness, and avalanche energy rating (UIS). Optimized for efficiency with low cost, simple gate drive circuitry, low figure-of-merit (R_on × Qg), and fast switching. Key parameters include V_DS(max)=550V, R_DS(on) max=0.85Ω at V_GS=10V, Q_g max=30nC, and single configuration.