Is SI2308DS-E3 available for RFQ?

Yes. SI2308DS-E3 by Vishay is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

Why is there no fixed price for SI2308DS-E3?

Pricing for SI2308DS-E3 can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

What are the key specifications of SI2308DS-E3?

SI2308DS-E3 is a Vishay Transistors with Continuous Drain Current (ID): 2 A and Gate to Source Voltage (Vgs): 20 V. Review the product details or submit an RFQ if you need confirmation before purchase.

How fast can I get a quote for SI2308DS-E3?

Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

How soon can SI2308DS-E3 be shipped?

If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

Can you suggest alternatives to SI2308DS-E3?

Yes. If SI2308DS-E3 is unavailable, obsolete, or does not meet your required lead time, we can help check similar Vishay Transistors parts or compatible alternatives.

SI2308DS-E3 - Vishay | Electronic Components

Name: SI2308DS-E3
Brand: Vishay
SKU: SI2308DS-E3
Availability: InStock

SI2308DS-E3 Overview

Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2 A amps.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 160 mΩ.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.