IRFIBF30GPBF [Vishay]

Third generation 900V N-Channel Power MOSFET featuring an isolated TO-220 FULLPAK package with 2.5kV isolation and 4.8mm creepage distance. Offers low on-resistance (3.7Ω at Vgs=10V), fast switching, and high dV/dt capability. The package design eliminates the need for additional insulating hardware and provides low thermal resistance equivalent to a 100 micron mica barrier.