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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRFBE30SPBF Vishay

    IRFBE30SPBF [Vishay]

    IRFBE30SPBF
    IRFBE30SPBF

    Part No:

    IRFBE30SPBF

    Category:

    Transistors

    Manufacturer:

    Vishay

    Description:

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Thermal Resistance Junction To Ambient
    62°C/W
    Gate Source Voltage
    ±20V
    Continuous Drain Current (100C)
    2.6A
    Continuous Drain Current (25C)
    4.1A
    Drain Source Voltage
    800V
    Pulsed Drain Current
    16A
    Thermal Resistance Junction To Case
    1.0°C/W
    Input Capacitance
    1300pF
    Output Capacitance
    310pF
    Total Gate Charge
    78 nC
    Reverse Transfer Capacitance

    Products Detail

    N-Channel Power MOSFETs featuring Halogen-free construction according to IEC 61249-2-21, Dynamic dV/dt Rating, Repetitive Avalanche Rated, Fast Switching, Ease of Paralleling, and Simple Drive Requirements. Compliant to RoHS Directive 2002/95/EC. These MOSFETs provide optimal performance for power management applications with low on-resistance and ruggedized device design.

    Key Features

    • Halogen-free According to IEC 61249-2-21, Dynamic dV/dt Rating, Repetitive Avalanche Rated, Fast Switching, Ease of Paralleling, Simple Drive Requirements, Compliant to RoHS Directive 2002/95/EC, VDS = 800V, RDS(on) = 3.0Ω at VGS=10V, Qg(Max) = 78 nC, Qgs = 9.6 nC, Qgd = 45 nC, Configuration = Single

    Documents

    Datasheets:

    IRFBE30S,L, SiHFBE30S,L
    Product FAQ

    1. Is IRFBE30SPBF available for RFQ?

    Yes. IRFBE30SPBF by Vishay is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRFBE30SPBF?

    Pricing for IRFBE30SPBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRFBE30SPBF?

    IRFBE30SPBF is a Vishay Transistors with Thermal Resistance Junction To Ambient: 62°C/W and Body Diode Reverse Recovery Charge Max: 2.7 nC. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRFBE30SPBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRFBE30SPBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRFBE30SPBF?

    Yes. If IRFBE30SPBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Vishay Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRFBE30SPBF

    Manufacturer:

    Vishay

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product
    190pF
    Operating Temperature
    -55°C ~ 150°C
    RoHS Status
    RoHS Compliant
    Avalanche Current
    4.1A
    Body Diode Reverse Recovery Charge Max
    2.7 nC
    Body Diode Reverse Recovery Charge Min
    1.8 nC
    Body Diode Reverse Recovery Time Max
    720 ns
    Body Diode Reverse Recovery Time Min
    480 ns
    Body Diode Voltage
    1.8V
    Configuration
    Single
    Continuous Source Drain Diode Current
    4.1A
    Drain Source Breakdown Voltage
    800V
    Drain Source On State Resistance
    3.0Ω
    Fall Time
    30 ns
    Gate Drain Charge
    45 nC
    Gate Source Charge
    9.6 nC
    Gate Source Threshold Voltage
    2.0V ~ 4.0V
    Halogen Free
    Yes
    IRFBE30L Package
    I2PAK (TO-262)
    IRFBE30S Package
    D2PAK (TO-263)
    Linear Derating Factor
    1.0W/°C
    Maximum Power Dissipation 25C
    125W
    Peak Diode Recovery DV Dt
    2.0V/ns
    Pulsed Diode Forward Current
    16A
    Repetitive Avalanche Energy
    13 mJ
    Rise Time
    33 ns
    SiHFBE30L Package
    I2PAK (TO-262)
    SiHFBE30S Package
    D2PAK (TO-263)
    Single Pulse Avalanche Energy
    260 mJ
    Soldering Temperature
    300°C
    Turn Off Delay Time
    82 ns
    Turn On Delay Time
    12 ns
    IRFBE30SPBF-Vishay-datasheet-5389210.pdf
    IRFBE30SPBF-Vishay-datasheet-127176698.pdf

    RohsStatement:

    Vishay-company-15.pdf
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