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    1. Home/
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    3. Discrete Semiconductors/
    4. Transistors/
    5. IRLD024PBF Vishay

    IRLD024PBF [Vishay]

    IRLD024PBF
    IRLD024PBF

    Part No:

    IRLD024PBF

    Category:

    Transistors

    Manufacturer:

    Vishay

    Description:

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

    RoHS Status:

    Datasheet:

    Stock Status:

    Available for RFQ

    Pricing:

    Request Volume Pricing

    Quote Response:

    Within 24 Hours

    Shipping:

    In-stock parts ship in 1–2 business days

    Specification

    Type
    Parameter
    Power Dissipation
    1.3W
    Gate Source Voltage
    ±10V
    Continuous Drain Current
    2.5A
    Input Capacitance
    870pF
    Output Capacitance
    360pF
    Total Gate Charge
    18 nC
    Rds On
    0.10Ω
    Reverse Transfer Capacitance
    53pF
    Operating Temperature
    -55°C ~ +175°C
    Supply Voltage
    60V
    Package
    HVMDIP

    Products Detail

    Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.

    Key Features

    • Dynamic dV/dt Rating, For Automatic Insertion Available, End Stackable, Logic-Level Gate Drive, RDS(on) Specified at VGS=4V and 5V, 175°C Operating Temperature, Fast Switching, Compliant to RoHS Directive 2002/95/EC, VDS=60V, RDS(on)=0.10Ω at VGS=5V, Qg(Max)=18nC, Qgs=4.5nC, Qgd=12nC, Configuration=Single

    Documents

    Datasheets:

    IRLD024
    Product FAQ

    1. Is IRLD024PBF available for RFQ?

    Yes. IRLD024PBF by Vishay is available for RFQ. Submit your required quantity and our team will confirm real-time stock, lead time, and volume pricing.

    2. Why is there no fixed price for IRLD024PBF?

    Pricing for IRLD024PBF can vary by order quantity, market availability, date code, packaging, and delivery destination. Request a quote to receive the latest volume pricing.

    3. What are the key specifications of IRLD024PBF?

    IRLD024PBF is a Vishay Transistors with Continuous Source Drain Diode Current: 2.5A and Thermal Resistance Junction Ambient: 120°C/W. Review the product details or submit an RFQ if you need confirmation before purchase.

    4. How fast can I get a quote for IRLD024PBF?

    Our sales team usually responds within 24 hours after receiving your RFQ. The quote may include stock status, unit price, lead time, shipping options, and available alternatives.

    5. How soon can IRLD024PBF be shipped?

    If stock is confirmed, in-stock parts can usually ship within 1–2 business days. Final lead time depends on quantity, stock source, and delivery destination.

    6. Can you suggest alternatives to IRLD024PBF?

    Yes. If IRLD024PBF is unavailable, obsolete, or does not meet your required lead time, we can help check similar Vishay Transistors parts or compatible alternatives.

    RFQ

    Part Number:

    IRLD024PBF

    Manufacturer:

    Vishay

    Looking for Pricing? Contact us for volume pricing.

    Shipping & Warranty

    Fast Dispatch: Ships in 5-7 days(in-stock parts within 1-2 days)

    Unishop Global Export: 1-7 days, $40.00

    Guaranteed Delivery: Door-to-door in 30 days

    Compliant Worldwide Shipping: DHL, FedEx, SF, and UPS.

    Feature

    IMPORTANT NOTICE

    Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

    Featured Product
    RoHS Status
    RoHS Compliant
    RoHS Status
    RoHS Compliant
    Body Diode Reverse Recovery Charge
    0.49 µC to 1.5 µC
    Body Diode Reverse Recovery Time
    110 ns to 260 ns
    Body Diode Voltage
    1.5V
    Continuous Source Drain Diode Current
    2.5A
    Drain Source Breakdown Voltage
    60V
    Drain Source On State Resistance
    0.10Ω
    Fall Time
    41 ns
    Forward Transconductance
    3.7 S
    Gate Drain Charge
    12 nC
    Gate Source Charge
    4.5 nC
    Gate Source Leakage
    ±100 nA
    Gate Source Threshold Voltage
    1.0V to 2.0V
    Internal Drain Inductance
    4.0nH
    Internal Source Inductance
    6.0nH
    Linear Derating Factor
    0.0083W/°C
    Max Power Dissipation
    1.3W
    Peak Diode Recovery Dv Dt
    4.5V/ns
    Pulsed Diode Forward Current
    20A
    Rise Time
    110 ns
    Single Pulse Avalanche Energy
    91 mJ
    Soldering Peak Temperature
    300°C
    Thermal Resistance Junction Ambient
    120°C/W
    Turn Off Delay Time
    23 ns
    Turn On Delay Time
    11 ns
    Zero Gate Voltage Drain Current
    25µA
    IRLD024PBF-Vishay-datasheet-31024.pdf
    IRLD024PBF-Vishay-datasheet-44060300.pdf
    IRLD024PBF-Vishay-datasheet-7616891.pdf
    IRLD024PBF-Vishay-datasheet-8641980.pdf
    IRLD024PBF-Vishay-datasheet-79539.pdf
    IRLD024PBF-Vishay-datasheet-8332899.pdf

    RohsStatement:

    Vishay-company-15.pdf
  • 30-Day Guarantee
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